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High-speed Signaling for Next-Generation Memory Interfaces |
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2020.07 ~ 2025.09 |
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[»ï¼ºÀüÀÚ] |
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°í¼º´É Synchronous ½Ã½ºÅÛÀ» À§ÇÑ HPCÇâ Clocked Sequential Circuit |
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2020.07 ~ 2023.06 |
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[»ï¼ºÀüÀÚ] |
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Â÷¼¼´ë Áö´ÉÇü ¹ÝµµÃ¼ ±â¼ú°³¹ß »ç¾÷ |
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2020.07 ~ 2023.02 |
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[°úÇбâ¼úºÎ] |
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Â÷¼¼´ëÀü·Â¹ÝµµÃ¼ ¼ÒÀÚÁ¦Á¶ Àü¹®Àη¾缺 |
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2020.03 ~ 2025.02 |
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[Çѱ¹»ê¾÷±â¼úÁøÈï¿ø] |
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»óº¯È¸Þ¸ð¸® ±â¹Ý ÀÎ ½ºÅ丮Áö ÇÁ·Î¼¼½Ì ±â¼ú °³¹ß |
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2020.03 ~ 2022.12 |
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[Çѱ¹»ê¾÷±â¼úÆò°¡°ü¸®¿ø] |
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ÀΰøÁö´ÉÇٽɰí±ÞÀÎÀç¾ç¼º |
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2019.04 ~ 2023.12 |
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[Á¤º¸Åë½Å±âȹÆò°¡¿ø] |
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ºê·¹ÀÎ µ¿ÀÛ¿¡ ±âÃÊÇÑ Memristor-CMOS ÇÏÀ̺긮µå ÄÄÇ»ÆÃ ¾ÆÅ°ÅØÃ³ |
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2019.3 ~ 2022.2 |
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[Çѱ¹¿¬±¸Àç´Ü] |
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ÀüÀÚ±¸Á¶ »óÀüÀÌ ¼ÒÀç±â¹Ý ´º¸®½ºÅÍ ÁýÀûȸ·Î |
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2017.6 ~ 2022.5 |
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[»ï¼ºÀüÀÚ] |
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±Û·Î¹ú °¡Ä¡Ã¢Ãâ Çõ½Å°øÇÐÀÎÀç ¾ç¼º |
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2019.4 ~ 2020.12 |
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[»ê¾÷Åë»óÀÚ¿øºÎ] |
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ÀÇ·á¿ë ¿þ¾î·¯ºí SoCÀÇ ¿¡³ÊÁö È¿À²¼º ¹× ½Å·Ú¼º È®º¸¸¦ À§ÇÑ ÃßÀûÇü ¹®ÅÎÀü¾Ð ±ÙÁ¢µ¿ÀÛ ¼³°è±â¼ú |
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2016.11 ~ 2019.10 |
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[±³À°°úÇбâ¼úºÎ] |
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DRAM High-Speed IO ¼³°è (Â÷¼¼´ë ¸Þ¸ð¸® Çâ Low-power/high-speed interface ±â¼ú) |
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2016.7 ~ 2020.6 |
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[»ï¼ºÀüÀÚ] |
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Processing in Memory ¹ÝµµÃ¼ ¾ÆÅ°ÅØÃ³ ¹× µ¥ÀÌÅÍ Áý¾àÀû ÀÀ¿ë󸮸¦ À§ÇÑ º´·Äó¸® ±â¼ú °³¹ß |
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2015.6 ~ 2020.5 |
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[Çѱ¹»ê¾÷±â¼úÆò°¡°ü¸®¿ø] |
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Temperature Drift / Power Noise¸¦ °í·ÁÇÑ High-Speed Design |
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2015.5 ~ 2016.4 |
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[ÇÏÀ̴нº] |
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Minimum Energy-Delay Point Tracking (MEDPT) ¾Ë°í¸®ÁòÀÌ Àû¿ëµÈ ÃÊÀúÀü·Â ½Ã½ºÅÛ IC ¼³°è ±â¼ú °³¹ß |
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2013.6 ~ 2016.5 |
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[±³À°°úÇбâ¼úºÎ] |
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½º¸¶Æ®Æù ¹× ½º¸¶Æ® µð¹ÙÀ̽º¸¦ À§ÇÑ ´ÙÁß ¹èÅ͸®¼¿ ´ÙÁß ¿¡³ÊÁö¿ø Áö¿ø Àü·Â°ü¸® ½Ã½ºÅÛ SoC °³¹ß |
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2011.5 ~ 2014.2 |
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[Áö½Ä°æÁ¦ºÎ] |
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High-speed Low-power I/O Interface ¿¬±¸ |
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2010.7 ~ 2015.6 |
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[»ï¼ºÀüÀÚ] |
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MEPT ¾Ë°í¸®ÁòÀÌ Àû¿ëµÈ ÃÊÀúÀü·Â ½Ã½ºÅÛ IC ¼³°è ±â¼ú °³¹ß |
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2010.5 ~ 2013.4 |
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[±³À°°úÇбâ¼úºÎ] |
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Solar Cell¿ë MPPT ¾Ë°í¸®µë ¹× ÃæÀü SoC °³¹ß |
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2010.3 ~ 2011.11 |
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[Çѱ¹ÀüÀÚÅë½Å¿¬±¸¿ø] |
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ÃÊÀ½ÆÄ Áø´Ü±â¿ë PULSER IC °³¹ß |
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2006.6 ~ 2009.11 |
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[»ê¾÷ÀÚ¿øºÎ] |
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¿Â Ĩ ¸ÖƼÇÁ·Î¼¼¼ Ç÷§Æû¿¡ °üÇÑ ¿¬±¸ |
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2006.3 ~ 2009.2 |
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[°úÇбâ¼úºÎ] |
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°í¼º´É ¸Þ¸ð¸® IC¸¦ À§ÇÑ ÀúÀü·Â ȸ·Î ±â¼ú ¿¬±¸ |
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2006.1 ~ 2006.12 |
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[»ï¼ºÀüÀÚ] |
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ÀúÀü·Â OLED/TFT-LCD¿ë ±¸µ¿È¸·Î IP ¿¬±¸ |
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2004.3 ~ 2005.2 |
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[Á¤º¸Åë½ÅºÎ] |
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